Study of interactions between α-Ta films and SiO2 under rapid thermal annealing

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 279-283

  Yuan, Z L ^a   Zhang, D H ^b   Li, C Y ^b,c   Prasad, K ^b   Tan, C M ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Ta; Cu metallization; Diffusion barrier; Rapid thermal annealing; SiO2

Indexed keywords

CU METALLIZATION; DIFFUSION BARRIERS; SHEET RESISTANCE; THERMAL INDUCED PRODUCTS;

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLOGRAPHY; DEPOSITION; METALLIZING; OXIDATION; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICES; SILICA; TEMPERATURE DISTRIBUTION; THERMOANALYSIS; X RAY DIFFRACTION;

TANTALUM COMPOUNDS;

EID: 4344607672     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.056     Document Type: Article

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