Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1619-1626

  Shimada, Hiroyuki ^b,c   Ohshima, Ichiro ^b   Ushiki, Takeo ^a,d   Sugawa, Shigetoshi ^a,b   Ohmi, Tadahiro ^a,b  

^a IEEE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c SEIKO EPSON CORPORATION   (Japan)

^d NEC CORPORATION   (Japan)

Author keywords

Barrier height; Constant current stress; Epitaxial growth; Gate injection; Metal gate; MOSFET; Silicon on insulator; SIMOX; Tantalum; Tantalum nitride; Work function; Xenon

Indexed keywords

GATE INJECTION; GATE OXIDE FILM; METAL GATE; RING OSCILLATOR; SEPARATION BY IMPLANTED OXYGEN TECHNOLOGY; TANTALUM METAL FILM; TANTALUM NITRIDE;

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GATES (TRANSISTOR); MOS CAPACITORS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; TANTALUM COMPOUNDS; TEMPERATURE; XENON;

MOSFET DEVICES;

EID: 0035424373     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936572     Document Type: Article

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