Growth mechanism of sputter deposited Ta and Ta-N thin films induced by an underlying titanium layer and varying nitrogen flow rates

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 353-357

  Chen, G S ^a   Chen, S T ^a   Huang, S C ^a   Lee, H Y ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; DIFFUSION; ELECTRIC CONDUCTIVITY MEASUREMENT; FILM GROWTH; METALLIZING; SILICON; SPUTTER DEPOSITION; SUBSTRATES; TANTALUM; TANTALUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

NITROGEN FLOW RATE;

METALLIC FILMS;

EID: 4244203988     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00679-6     Document Type: Article

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