Heteroepitaxial growth of wide gapp-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

Applied Physics A: Materials Science and Processing

Volumn 79, Issue 4-6, 2004, Pages 1517-1520

  Hiramatsu, H ^a   Ueda, K ^b,c   Takafuji, K ^b   Ohta, H ^a   Hirano, M ^a   Kamiya, T ^a,b   Hosono, H ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL LATTICES; EPITAXIAL GROWTH; EXCITONS; HIGH RESOLUTION ELECTRON MICROSCOPY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; QUANTUM EFFICIENCY; RARE EARTH ELEMENTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THIN FILMS; ULTRAVIOLET DEVICES; X RAY DIFFRACTION;

HETEROEPITAXIAL FILMS; HETEROEPITAXIAL GROWTH; ION SUBSTITUTION; SOLID-PHASE EPITAXY;

SEMICONDUCTOR MATERIALS;

EID: 4344604207     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2836-2     Document Type: Conference Paper

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