Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 598-600

  Hiramatsu, Hidenori ^a   Ueda, Kazushige ^a   Ohta, Hiromichi ^a   Orita, Masahiro ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER FILMS; COPPER LAYER; CRYSTAL QUALITIES; EPITAXIALLY GROWN; HIGH ORIENTATION; HIGH QUALITY; METALLIC COPPER; P TYPE SEMICONDUCTOR; POST ANNEALING; ROOM TEMPERATURE; SINGLE-CRYSTAL SUBSTRATES; ULTRAVIOLET EMISSION; WIDE GAP;

AMORPHOUS FILMS; COPPER; EPITAXIAL GROWTH; SEMICONDUCTOR GROWTH; ZIRCONIA;

EPITAXIAL FILMS;

EID: 79956010906     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494853     Document Type: Article

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