Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS 1-xSe x oxychalcogenides

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4768-4770

  Ueda, Kazushige ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; BAND GAP ENGINEERING; BAND-EDGE EMISSIONS; DIFFUSE REFLECTANCE SPECTRUM; ELECTRICAL CONDUCTION; OXYCHALCOGENIDES; P-TYPE; P-TYPE CONDUCTIVITY; ROOM TEMPERATURE; SEEBECK; SHARP EMISSION; ULTRAVIOLET LIGHT IRRADIATION; WIDE GAP;

LASER RADIATION; SOLID SOLUTIONS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

ENERGY GAP;

EID: 0036535973     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456240     Document Type: Article

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