Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 218-228

  Kiessling, F M ^a   Rudolph, P ^a   Neubert, M ^a   Juda, U ^a   Naumann, M ^a   Ulrici, W ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Dislocations; A1. Point defects; A1. Precipitates; A2. Growth from melt; A2. Liquid encapsulated Czochralshi method; A2. Vapor pressure controlled Czochralshi method; B1. GaAs

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTROMAGNETIC WAVE SCATTERING; ENCAPSULATION; MORPHOLOGY; TOMOGRAPHY; VAPOR PRESSURE;

GAAS; LIQUID ENCAPSULATED CZOCHRALSKI METHOD; PRECIPITATES; VAPOR PRESSURE CONTROLLED CZOCHRALSKI METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4344584503     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.124     Document Type: Article

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