Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs

Materials Science and Engineering B

Volumn 55 B55, Issue 1-2, 1998, Pages 79-85

  Weyher, J L ^a,c   Schober, T ^a   Sonnenberg, K ^a   Franzosi, P ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b CNR   (Italy)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

Etching; Liquid encapsulated Czochralski grown GaAs; Microdefects; TEM; Vertical Bridgman grown GaAs

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

MICRODEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032140968     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(98)00182-2     Document Type: Article

References (27)

1. A.G. Cullis, P.D. Augustus, D.J. Stirland, J. Appl. Phys. 51 (1980) 1556.
2. E.A. Lodge, G.R. Booker, C.A. Warwick, G.T. Brown, Inst. Phys. Conf. Ser. No. 76 (1985) 217.
3. B.-T. Lee, T. Sands, R. Gronsky, E.D. Bourret, Inst. Phys. Conf. Ser. No. 83 (1986) 51.
4. E.D. Bourret, A.G. Elliot, B.T. Lee, J.M. Jaklevic, in: E.R. Weber (Ed.), Defect Recognition and Image Processing, Elsevier, Amsterdam, 1987, pp. 95-107.
5. K. Sumino, in: J. Chikawa, K. Sumino, K. Wada (Eds.), Defects and Properties of Semiconductors: Defect Engineering, KTK Scientific Publishers, Tokyo, 1987, pp. 3-24.
6. B.-T. Lee, R. Gronsky, E.D. Bourret, J. Crystal Growth 96 (1989) 333.
7. R. Gleichmann, A. Höpner, R. Fornari, C. Frigeri, Inst. Phys. Conf. Ser. No. 104 (1989) 181.
8. R. Fornari, C. Frigeri, R. Gleichmann, J. Electron. Mat. 18 (1989) 185.
9. D.J. Stirland, in: K. Sumino (Ed.), Defect Controle in Semiconductors, Elsevier, North-Holland, 1990, pp. 783-794.
10. P. Wurzinger, H. Oppolzer, P. Pongratz, P. Skalicky, J. Crystal Growth 110 (1991) 769.
11. P. Schlossmacher, K. Urban, H. Rüfer, J. Appl. Phys. 71 (1992) 620.
12. J.L. Weyher, C. Frigeri, L. Zanotti, H.C. Alt, P. van der Wel, P. Gall, in: C.J. Miner, W. Ford, E.R. Weber (Eds.) Semi-Insulating III-V Mat. Ixtapa, Mexico, IOP, Bristol, 1992, pp. 97-104.
13. E. Buhrig, C. Frank, G. Gärtner, K. Hein, V. Klemm, G. Kühnel, U. Voland, Mater. Sci. Eng. B28 (1994) 87.
14. J.L. Weyher, K. Sonnenberg, T. Schober, in: M. Godlewski (Ed.), Semi-Insulating III-V Mat. Warsaw, Poland, World Scientific, Singapore, 1994, pp. 105-110.
15. J.P. Cornier, M. Duseaux, J.P. Chevalier, Appl. Phys. Lett. 45 (1984) 1105.
16. B.-T. Lee, E.D. Bourret, R. Gronsky, I.-S. Park, J. Appl. Phys. 65 (1989) 1030.
17. J.L. Weyher, C. Frigeri, P. Gall, R. Kremer, in: M. Godlewski (Ed.), Semi-Insulating III-V Mat. Warsaw, Poland, World Scientific, Singapore, 1994, pp. 163-165.
18. J.L. Weyher, Inst. Phys. Conf. Ser. No. 146 (1995) 399.
19. G.M. Williams, A.G. Cullis, D.J. Stirland, Appl. Phys. Lett. 59 (1991) 2585.
20. O. Oda, H. Yamamoto, M. Seiwa, G. Kano, T. Inoue, M. Mori, H. Shimakura, M. Oyake, Semicond. Sci. Technol. 7 (1992) A215.
21. J.L. Weyher, P. Gall, Le Si Dang, J.P. Fillard, J. Bonnafé, H. Rüfer, M. Baumgartner, K. Löhnert, Semicond. Sci. Technol. 7 (1992) A45.
22. K. Sonnenberg, A. Altmann, Berichte des Forschungszentrums Jülich (1994) 2939.
23. J.L. Weyher, J. van de Ven, J. Crystal Growth 63 (1983) 285.
24. S. Komiya, T. Kotani, J. Electrochem. Soc. 125 (1978) 2019.
25. G.M. Martin, P. Suchet, P. Deconinck, G. Gillardin, Inst. Phys. Conf. Ser. No. 100 (1989) 363.
26. Y. Otoki, M. Watanabe, T. Inada, S. Kuma, J. Crystal Growth 103 (1990) 85.
27. E. Molva, P. Bunod, A. Chabli, A. Lombardot, S. Dubois, F. Bertin, J. Crystal Growth 103 (1990) 91.