Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 303-306

  Kiessling, F M ^a   Neubert, M ^a   Rudolph, P ^a   Ulrici, W ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

As pressure control; GaAs; Non stoichiometry; Point defects; Structural defects; VCz

Indexed keywords

BORON COMPOUNDS; CARBON MONOXIDE; COMPOSITION; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); PARTIAL PRESSURE; POINT DEFECTS; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

AS PRESSURE CONTROL; GAAS; NON-STOICHIOMETRY; STRUCTURAL DEFECTS; VAPOR PRESSURE CONTROLLED CZOCHRALSKI (VCZ);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642634107     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.07.022     Document Type: Conference Paper

References (10)

1. Mullin J.B., Straughan B.W., Brickell W.S. Liquid encapsulation techniques. the use of an inert liquid in supressing dissociation during the melt growth of InAs and GaAs crystals J Phys Chem Solids. 26:1965;782-784.
2. Rudolph P., Jurisch M. Bulk growth of GaAs - an overview. J Crystal Growth. 198/199:1999;325-335.
3. Gremmelmaier R. Herstellung von InAs- und GaAs-Einkristallen. Z Naturforschung. 11a:1956;511-513.
4. Steinemann A., Zimmerli U. Dislocation-free GaAs single crystals. Peiser H.S. Crystal growth. 1967;81-87 Pergamon Press, Oxford.
5. Tomizawa K., Sassa K., Shimanuki Y., Nishizawa J. Dislocations in GaAs crystals grown by As pressure controlled Czochralski method. Chikawa J., Sumino K., Wada K. Defects and properties of semiconductors: defect engineering. 1987;25-36 KTK Science Publications, Tokyo.
6. Tomizawa K., Sassa K., Shimanuki Y., Nishizawa J. Growth of low dislocation density GaAs by As pressure controlled Czochralski method. Inst Phys Conf Ser. 91:1987;435-438.
7. Tatsumi M., Kawase T., Iguchi Y., Fujita K., Yamada M. Characterization of semi-insulating III-V materials grown by vapor pressure controlled Czochralski method. Godlewski M. Semi-insulating III-V materials. 1994;11-18 World Scientific, Singapore.
8. Neubert M., Rudolph P. Growth of semi-insulating GaAs crystals in low temperature gradients by using the vapour pressure controlled Czochralski method (VCz). Progr Crystal Growth Charact Mater. 43:2001;119-185.
9. Kiessling FM, Bondarenko V, Frank-Rotsch Ch, Neubert M, Rudolph P, Ulrici W. VCz growth of GaAs crystals without boric oxide encapsulant. In: Abstract book of fourteenth American conference on crystal growth & epitaxy, Seattle, USA. August 04-09, 2002. p. 92.
10. Lagowski J., Gatos H.C., Parsey J.M., Wada K., Kaminska M., Walukiewicz W. Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors. Appl Phys Lett. 40:1982;342-344.