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Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 22-30

Dislocation studies in VCz GaAs by laser scattering tomography

(4) Naumann, M a Rudolph, P a Neubert, M a Donecker, J a

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

A1. Crystal structure; A1. Defects; A1. Light scattering tomography; A2. Czochralski method; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); LASER APPLICATIONS; LIGHT SCATTERING; TOMOGRAPHY;

LASER SCATTERING TOMOGRAPHY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035452390 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01436-1 Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.