Low dislocation density Si-doped GaAs single crystal grown by the vapor-pressure-controlled Czochralski method

Journal of Crystal Growth

Volumn 173, Issue 1-2, 1997, Pages 33-41

  Hashio, K ^a   Sawada, S ^a   Tatsumi, M ^a   Fujita, K ^a   Akai, S ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); OPTICAL DEVICES; PRESSURE CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PRESSURE;

VAPOR PRESSURE CONTROLLED CZOCHRALSKI (VCZ) METHOD;

SINGLE CRYSTALS;

EID: 0031547004     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00785-3     Document Type: Article

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