A combined carbon and oxygen segregation model for the LEC growth of SI GaAs

Journal of Crystal Growth

Volumn 247, Issue 1-2, 2003, Pages 69-76

  Eichler, S ^a   Seidl, A ^b   Borner F ^a   Kretzer, U ^a   Weinert, B ^a  

^a FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

^b RWE POWER AG   (Germany)

Author keywords

A1. Characterization; A1. Doping; A1. Mass transfer; A1. Segregation; A2. Liquid encapsulated Czochralski method; B2. Semiconducting gallium arsenide

Indexed keywords

CARBON; DOPING (ADDITIVES); MASS TRANSFER; OXYGEN; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE;

LIQUID ENCAPSULATED CZOCHRALSKI (LEC) METHOD;

CRYSTAL GROWTH FROM MELT;

EID: 0037211156     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01945-0     Document Type: Article

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