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Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 215-219

Precipitate engineering in GaAs studied by laser scattering tomography

(4) Steinegger, T a Naumann, M b Jurisch, M a Donecker, J b

a FREIBERGER COMPOUND MATERIALS GMBH (Germany)

b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

Annealing; GaAs; Laser scattering tomography; Nucleation; Ostwald ripening; Precipitate

Indexed keywords

ANNEALING; DISSOLUTION; LASER BEAM EFFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM ARSENIDE;

LASER SCATTERING TOMOGRAPHY (LST); OSTWALD RIPENING;

TOMOGRAPHY;

EID: 0035932260 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00640-1 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.