Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: A thermochemical approach

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 343-348

  Korb, J ^a   Flade, T ^b   Jurisch, M ^b   Kohler A ^b   Reinhold, Th ^b   Weinert, B ^b  

^a GTT TECHNOLOGIES   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

Boron control; Carbon; GaAs; LEC; Nitogen; Oxygen; Thermochemistry

Indexed keywords

BORON; CARBON; CRYSTAL GROWTH FROM MELT; HYDROGEN; NITROGEN; OXIDES; OXYGEN; PHASE EQUILIBRIA; SEMICONDUCTOR GROWTH;

LIQUID ENCAPSULATED CRYSTAL GROWTH (LEC); SOFTWARE PACKAGE CHEMSAGE; THERMOCHEMISTRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033514651     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01089-6     Document Type: Article

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