Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1847-1851

  Shah, P B ^a   Nichols, B M ^a   Derenge, M D ^a   Jones, K A ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONICAL ETCHED STRUCTURES; PHOTORESIST MASKS; REACTIVE ION ETCHER (RIE); VACUUM MICROELECTRONIC (VME) DEVICES;

ALUMINUM NITRIDE; DRY ETCHING; ELECTRON EMISSION; FIELD EMISSION CATHODES; GALLIUM COMPOUNDS; GAS EMISSIONS; INDUCTIVELY COUPLED PLASMA; MAGNETIC COUPLINGS; NITROGEN; PHOTORESISTORS; PLASMA ETCHING; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES;

MICROELECTRONICS;

EID: 4344573090     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1690256     Document Type: Conference Paper

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