Effect of oxygen pressure and laser fluence during pulsed laser deposition of TiO2 on MTOS (Metal-TiO2-SiO2-Si) capacitor characteristics

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 57-62

  Paily, Roy ^a   DasGupta, Amitava ^a   DasGupta, Nandita ^a   Ganguli, Tapas ^b   Kukreja, Lalit M ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

287 metal oxide semiconductor structures (MOS); 495 titanium oxide; 91 laser deposition; 96 dielectrics

Indexed keywords

287 METAL-OXIDE-SEMICONDUCTORS (MOS); 495 TITANIUM OXIDE; 91 LASER DEPOSITION; 96 DIELECTRICS;

LASERS; LEAKAGE CURRENTS; OPTIMIZATION; OXYGEN; PULSED LASER DEPOSITION; REDUCTION; TITANIUM DIOXIDE; TRANSISTORS;

MOS CAPACITORS;

EID: 4344568574     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.020     Document Type: Article

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