Defect-selective etching of scandium nitride crystals

Journal of Crystal Growth

Volumn 293, Issue 2, 2006, Pages 242-246

  Gu, Z ^a   Edgar, J H ^a   Coffey, D W ^b   Chaudhuri, J ^c   Nyakiti, L ^c   Lee, R G ^c   Wen, J G ^d  

^a Kansas State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c Texas Tech University   (United States)

^d United States of America   (United States)

Author keywords

A1. Defects; A1. Etching; B1. Nitrides; B2. Semiconducting materials

Indexed keywords

CRYSTAL ORIENTATION; ETCHING; NITRIDES; SCANDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

ETCH PITS; ETCHING TEMPERATURE; EUTECTIC MIXTURES; SCANDIUM NITRIDE;

CRYSTAL DEFECTS;

EID: 33746385383     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.065     Document Type: Article

References (25)

1. D. Gall, Crystal growth and physical properties of polycrystalline and epitaxial scandium nitride layers, Ph.D. Dissertation, University of Illinois, Urbana, IL, 2000.
2. Gall D., Petrov I., Desjardins P., and Greene J.E. J. Appl. Phys. 86 (1999) 5524
3. Gall D., Stadele M., Jarrendahl K., Petrov I., Desjardins P., Haasch R.T., Lee T.-Y., and Greene J.E. Phys. Rev. B 63 (2001) 125119
4. Bai X., and Kordesch M.E. Appl. Surf. Sci. 175-176 (2001) 499
5. Dismukes J.P., and Moustakas T.D. Proc. Electrochem. Soc. 96-11 (1996) 111
6. Al-Brithern H.A., Yang H., and Smith A.R. J. Appl. Phys. 96 (2004) 3787
7. Herwadkar A., and Lambrecht W.R.L. Phys. Rev. B 72 (2005) 235207
8. X. Bai, Growth and characterization of IIIB-nitride semiconductors and devices, Ph.D. Dissertation, Ohio University, Athens, OH, 2000.
9. Bai X., Hill D.M., and Kordesch M.E. Mater. Res. Soc. Symp. Proc. 572 (1999) 529
10. Perjeru F., Bai X., Ortiz-Libreros M.I., Higgins R., and Kordesch M.E. Appl. Surf. Sci. 175-176 (2001) 490
11. Al-Brithen H.A., and Smith A.R. Appl. Phys. Lett. 77 (2000) 2485
12. Smith A.R., Al-Birthen H.A.H., Ingram D.C., and Gall D. J. Appl. Phys. 90 (2001) 1809
13. Gall D., Petrov I., Hellgren N., Hultman L., Sundgren J.E., and Greene J.E. J. Appl. Phys. 84 (1998) 6034
14. Gall D., Petrov I., Madsen L.D., Sundgren J.-E., and Greene J.E. J. Vac. Sci. Technol. A 16 (1998) 2411
15. Gu Z., Edgar J.H., Pomeroy J., Kuball M., and Coffey D.W. J. Mater. Sci.: Mater. Electron. 15 (2004) 555
16. Lin C.T., and Liang W.Y. Physica C 225 (1994) 275
17. Weyher J.L., Macht L., Kamler G., Borysiuk J., and Grzegory I. Phys. Stat. Sol. (c) (2003) 821
18. Zhuang D., Edgar J.H., Strojek B., Chaudhuri J., and Rek Z. J. Crystal Growth 26 (2004) 89
19. Takahashi J., Kanaya M., and Fujiwara Y. J. Crystal Growth 135 (1994) 61
20. Jain L.C., and Murty T.S. Indian J. Pure Appl. Phys. 14 (1976) 67
21. Yamamoto M., Watanabe J., and Suenaga J. Ser. A 17 (1965) 243
22. Akita K., Kusunoki T., Komiya S., and Kotani T. J. Crystal Growth 46 (1979) 783
23. Lin C.T. Adv. Sci. Technol. 8 (1995) 211
24. Koziejowska A., and Sangwal K. Crystal Res. Technol. 21 (1986) 641
25. Hendricks S.B. Am. Mineral. 40 (1955) 139