Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kozhukhova, E A ^a   Belogorokhov, A I ^a   Kim, H S ^b   Norton, D P ^b   Pearton, S J ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CONCENTRATION (PROCESS); PULSED LASER DEPOSITION; SUBSTRATES;

DONOR CONCENTRATION; HIGH RESISTIVITY LAYER;

METALLIC FILMS;

EID: 43049120019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2906180     Document Type: Article

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