Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Journal of Physics D: Applied Physics

Volumn 41, Issue 10, 2008, Pages

  Li, Shi Bin ^a   Wu, Zhi Ming ^a   Jiang, Ya Dong ^a   Yu, Jun Sheng ^a   Li, Wei ^a   Liao, Nai Man ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMORPHISM; RAMAN SPECTROSCOPY; SEMICONDUCTOR GROWTH; SILANES; THERMAL GRADIENTS; VOLUME FRACTION;

PLASMA-INDUCED THERMOPHORESIS; POLYMORPHOUS SILICON FILM; SOURCE GAS;

MICROCRYSTALLINE SILICON;

EID: 43049110611     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/10/105207     Document Type: Article

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