Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 551-555

  Bronner, W ^a   Mehring, M ^a   Kleider, J P ^b   Mencaraglia, D ^b   Bruggemann R ^c   Roca i Cabarrocas, P ^d  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIV PARIS SUD   (France)

^c UNIVERSITY OF OLDENBURG   (Germany)

^d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRONS; HYDROGENATION; MICROSTRUCTURE; NANOTECHNOLOGY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUENCHING; SILANES;

ELECTRICALLY DETECTED MAGNETIC RESONANCE (EDMR);

AMORPHOUS SILICON;

EID: 0036540433     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01201-7     Document Type: Article

References (29)