Influence of direct-tunneling gate current on negative bias temperature instability in ultra-thin gate oxides

2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2005, Pages 143-146

  Mitani, Yuichiro ^a   Satake, Hideki ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MOSFET DEVICES; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

DIRECT-TUNNELING GATE CURRENT; GATE DIELECTRICS; GATE ELECTRODES; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

ULTRATHIN FILMS;

EID: 25844456740     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/icicdt.2005.1502613     Document Type: Conference Paper

References (12)

1. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K.Imai, T.Horiuchi, in Symposium on VLSI Technology, p. 73 (1999).
2. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, T. Horiuchi, in Symposium on VLSI Technology, p. 92 (2000).
3. G. La Rosa, F. Guarin, S. Rauch, A. Acovic, J. Lukaitis, E. Crabbe, in Proc. IEEE International Reliability Physics Symposium, p. 282 (1997).
4. K. Uwasawa, T. Yamamoto, T. Mogami, in IEEE International Electron Devices Meeting Technical Digest, p. 871 (1995).
5. T. Yamamoto, K. Uwasawa, T. Mogami, IEEE Trans. Electron Devices, p. 921 (1999).
6. Y. Mitani, M. Nagamine, H. Satake, A. Toriumi, in IEEE International Electron Devices Meeting Technical Digest, p. 509 (2002).
7. K. O. Jeppson and C. M, Svennson, J. Appl. Phys., p. 2004 (1977).
8. M. A. Alam, in IEEE International Electron Devices Meeting Technical Digest, p. 345 (2003).
9. S.Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala and S. Krishnan, in Proc. IEEE International Reliability Physics Symposium, p. 273 (2004).
10. G. Groeseneken, H. E. Maes, N. Beltran and R. F. De Keersmaecker, IEEE Trans. Electron Devices, p. 42 (1984).
11. S. Tsujikawa, T. Mine, K. Watanabe, Y. Shimamoto, R. Tsuchiya, K. Ohnishi, T. Onai, J. Yugami, S. Kimura, in Proc. IEEE International Reliability Physics Symposium, p. 183 (2003).
12. E. Rosenbaum and L. F. Register, IEEE Trans. Electron Devices, p. 317 (1997).