Divacancy annealing in Si: Influence of hydrogen

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 15, 2004, Pages

  Monakhov, E V ^a   Ulyashin, A ^b   Alfieri, G ^a   Kuznetsov, A Yu ^a   Avset, B S ^c   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b UNIVERSITY OF HAGEN   (Germany)

^c SINTEF   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; OXYGEN; SILICON;

ARTICLE; CHEMICAL BOND; CHEMICAL INTERACTION; CHEMICAL REACTION; CHEMICAL STRUCTURE; COMPARATIVE STUDY; COMPLEX FORMATION; ELECTRIC POTENTIAL; HYDROGENATION; SPECTROSCOPY; TECHNIQUE; TEMPERATURE DEPENDENCE;

EID: 42749103678     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.153202     Document Type: Article

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