Electronic structure of divacancy-hydrogen complexes in silicon

Journal of Physics Condensed Matter

Volumn 15, Issue 39, 2003, Pages

  Coutinho, J ^a   Torres, V J B ^a   Jones, R ^b   Oberg S ^c   Briddon, P R ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ELECTRONIC STRUCTURE; ENERGY GAP; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; SILICON;

CARRIER TRAPS; DIVACANCY HYDROGEN COMPLEXES; ELECTRICAL GAP LEVELS; LARGE SUPERCELLS; VACANCY LIKE DEFECTS;

HYDROGEN;

EID: 0142060149     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/39/005     Document Type: Article

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