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Volumn 23, Issue 1, 2003, Pages 5-9

Identification of hydrogen related defects in proton implanted float-zone silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; ION IMPLANTATION; PROTONS;

EID: 0038115176     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2002113     Document Type: Article
Times cited : (19)

References (19)
  • 10
    • 0000542038 scopus 로고
    • edited by N.B. Urli, J.W. Corbett (Inst. Phys. Conf. Ser., 31)
    • L.C. Kimerling, in Radiation Effects in Semiconductors, edited by N.B. Urli, J.W. Corbett (Inst. Phys. Conf. Ser., 31 1977), p. 221
    • (1977) Radiation Effects in Semiconductors , pp. 221
    • Kimerling, L.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.