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Volumn 23, Issue 1, 2003, Pages 5-9
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Identification of hydrogen related defects in proton implanted float-zone silicon
d
CNR IMETEM
(Italy)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BAND STRUCTURE;
CRYSTAL DEFECTS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
HYDROGEN;
ION IMPLANTATION;
PROTONS;
CONDUCT ION BAND EDGE;
FLOAT ZONE SILICON;
HYDROGEN RELATED DEFECTS;
PROTON IMPLANTION;
VACANCY OXYGEN;
SEMICONDUCTING SILICON;
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EID: 0038115176
PISSN: 12860042
EISSN: None
Source Type: Journal
DOI: 10.1051/epjap:2002113 Document Type: Article |
Times cited : (19)
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References (19)
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