Tight binding studies of strained Ge/Si(0 0 1) growth

Surface Science

Volumn 526, Issue 3, 2003, Pages 356-366

  Li, K ^a,b   Bowler, D R ^a   Gillan, M J ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b XIAMEN UNIVERSITY   (China)

Author keywords

Computer simulations; Germanium; Semiconductor semiconductor heterostructures; Silicon; Surface stress

Indexed keywords

COMPUTER SIMULATION; FILM GROWTH; GERMANIUM; SILICON; STRAIN;

TIGHT BINDING;

MONOLAYERS;

EID: 0037368927     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02686-9     Document Type: Article

References (22)

1. Mo Y.-W., Lagally M.G. J. Crystal Growth. 111:1991;876.
2. Oviedo J., Bowler D.R., Gillan M.J. Surf. Sci. 515:2002;483.
3. Goldfarb I., Owen J.H.G., Hayden P.T., Bowler D.R., Miki K., Briggs G.A.D. Surf. Sci. 394:1997;105.
4. Voigtländer B., Kästner M. Phys. Rev. B. 60:1999;R5121.
5. Wu F., Chen X., Zhang Z., Lagally M.G. Phys. Rev. Lett. 74:1995;574.
6. Huang K.-H., Ku T.-S., Lin D.-S. Phys. Rev. B. 56:1997;4878.
7. Köhler U., Jusko O., Müller B., von Hoegen M., Pook M. Ultramicroscopy. 42-44:1992;832.
8. Tomitori M., Watanabe K., Kobayashi M., Nishikawa O. Appl. Surf. Sci. 76-77:1994;322.
9. Goldfarb I., Hayden P.T., Owen J.H.G., Briggs G.A.D. Phys. Rev. Lett. 78:1997;3959.
10. Goedecker S. Rev. Mod. Phys. 71:1999;1085.
11. Tersoff J. Phys. Rev. B. 43:1991;9377.
12. Tersoff J. Phys. Rev. B. 45:1992;8833.
13. Liu F., Lagally M.G. Phys. Rev. Lett. 76:1996;3156.
14. Uberuaga B.P., Leskovar M., Smith A.P., Jónsson H., Olmstead M. Phys. Rev. Lett. 84:2000;2441.
15. Goringe C.M., Bowler D.R., Hernández E.H. Rep. Prog. Phys. 60:1997;1447.
16. Bowler D.R., Fearn M., Goringe C.M., Horsfield A.P., Pettifor D.G. J. Phys.: Condens. Matter. 10:1998;3719.
17. Bowler D.R. J. Phys.: Condens. Matter. 14:2002;4527.
18. C.M. Goringe, Computational modelling of semiconductor surfaces, Ph.D. thesis, Oxford University, 1995, URL http://www.cmmp.ucl.ac.uk/̃drb/DensEl.html.
19. Li X.-P., Nunes R.W., Vanderbilt D. Phys. Rev. B. 47:1993;10891.
20. Monkhorst H.J., Pack J.D. Phys. Rev. B. 13:1976;5188.
21. Bowler D.R., Aoki M., Goringe C.M., Horsfield A.P., Pettifor D.G. Modell. Simul. Mat. Sci. Eng. 5:1997;199.
22. Semiconductors. Madelung O. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. vol. 17:1982;Springer-Verlag, Berlin.