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Volumn 298, Issue SPEC. ISS, 2007, Pages 219-222

Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates

(7) Horng, R H a Wang, W K a Huang, S C a Huang, S Y a Lin, S H a Lin, C F a Wuu, D S a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

Author keywords

A1. Defects; A3. Metalorganic vapor phase epitaxy; B1. Nitride; B1. Patterned sapphire substrate; B3. Light emitting diodes

Indexed keywords

COMPOSITION; CRYSTAL DEFECTS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EPITAXIAL LATERAL OVERGROWTH REGION; MICRO-PHOTOLUMINESCENCE (PL) MEASUREMENTS; PATTERNED SAPPHIRE SUBSTRATES (PSS); SAPPHIRE INTERFACES;

EPITAXIAL GROWTH;

EID: 33846437101 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.038 Document Type: Article

Times cited : (61)

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