Epitaxial growth of AlN on single crystal Mo substrates

Thin Solid Films

Volumn 516, Issue 15, 2008, Pages 4809-4812

  Okamoto, Koichiro ^a   Inoue, Shigeru ^a   Nakano, Takayuki ^b   Kim, Tae Won ^b   Oshima, Masaharu ^c   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Aluminum nitride; Epitaxy; Molybdenum; Structural properties

Indexed keywords

ALUMINUM COMPOUNDS; EPITAXIAL FILMS; MOLYBDENUM COMPOUNDS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; STRUCTURAL PROPERTIES;

ALUMINUM NITRIDE; CRYSTALLINE QUALITY; ELECTRON BACKSCATTERED DIFFRACTION ANALYSIS; FREQUENCY FILTER DEVICES; ROTATIONAL SYMMETRY;

EPITAXIAL GROWTH;

EID: 42649121015     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.122     Document Type: Article

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