Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4810-4815

  Wei, Shiqiang ^a   Oyanagi, Hiroyuki ^a   Kawanami, Hitoshi ^a   Sakamoto, Kunihiro ^a   Sakamoto, Tsunenori ^a   Tamura, Kazuhisa ^a,b   Saini, Naurang L ^a,c   Uosaki, Kohei ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOND CHARGES; DOMINANT FACTOR; ELECTRONIC CONFIGURATION; EXTENDED X-RAY ABSORPTION FINE STRUCTURES; IMPURITIES IN; IMPURITY ATOMS; ION CORES; LATTICE EXPANSION; LOCAL LATTICE; LOCAL LATTICE DISTORTION; LOCAL STRUCTURE; LOCALIZED CHARGE; SI CRYSTALS; X RAY ABSORPTION FINE STRUCTURES;

ABSORPTION; ATOMS; BOND LENGTH; CRYSTAL IMPURITIES; FLUORESCENCE; GERMANIUM; SILICON; X RAY ABSORPTION; X RAYS;

CRYSTAL ATOMIC STRUCTURE;

EID: 0000101168     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366340     Document Type: Article

References (33)

1. I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, and L. Resnick, Phys. Rev. B 55, 1303 (1997).
2. H. Oyanagi, Y. Takeda, T. Matsushita, T. Ishiguro, T. Yao, and A. Sasaki, Solid State Commun. 67, 453 (1988).
3. A. Herrera-Gomez, P. M. Rousseau, G. Materlik, T. Kendelewicz, J. C. Woicik, P. B. Griffin, J. Plummet, and W. E. Spicer, Appl. Phys. Lett. 68, 3090 (1996).
4. K. C. Haas, R. J. Lempert, and H. Ehrenreich, Phys. Rev. Lett. 52, 77 (1984).
5. Y. Seki, J. Matsui, and H. Watanabe, J. Appl. Phys. 47, 3374 (1976).
6. H. Ehrenreich and J. P. Hirth, Appl. Phys. Lett. 46, 668 (1985).
7. J. Makinen, T. Laine, J. Partanen, K. Saarinen, P. Hautojarvi, K. Tappura, T. Hakkarainen, H. Asonen, M. Pessa, J. P. Kauppinen, K. Vanttinen, M. A. Paalanen, and J. Likonen, Phys. Rev. B 53, 7851 (1996).
8. J. C. Mikkelsen and J. B. Boyce, Phys. Rev. B 28, 7130 (1983).
9. R. Bisaro, P. Merenda, and T. P. Pearsall, Appl. Phys. Lett. 34, 4457 (1979).
10. T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, and J. P. Mannaerts, Phys. Rev. Lett. 58, 729 (1987).
11. J. E. Guyer and P. W. Voorhees, Phys. Rev. Lett. 74, 4031 (1995).
12. D. E. Jesson, K. M. Chen, S. J. Pennycook, T. Thundat, and R. J. Warmack, Science 268, 1161 (1995).
13. J. W. P. Hsu, E. A. Fitzgerald, Y. H. Xie, P. J. Silverman, and M. J. Cardillo, Appl. Phys. Lett. 61, 1293 (1992).
14. H. Oyanagi, R. Shioda, Y. Kuwahara, and K. Haga, J. Synchrotron Radiat. 2, 99 (1995).
15. L. M. Murphy, B. R. Dobson, M. Neu, C. A. Ramsdale, R. W. Strange, and S. S. Hasnain, J. Synchrotron Radiat. 2, 64 (1995).
16. H. Oyanagi, I. Owen, M. Grimshaw, P. Head, M. Martini, and M. Saito, Rev. Sci. Instrum. 66, 5477 (1995).
17. K. Sakamoto, T. Sakamoto, S. Nagao, G. Hashiguchi, K. Kuniyoshi, and Y. Bando, Jpn. J. Appl. Phys., Part 1 26, 666 (1987).
18. T. Sakamoto and M. Komuro, Jpn. J. Appl. Phys., Part 2 22, L760 (1983).
19. H. Oyanagi, Y. Kuwahara, and H. Yamaguchi, Rev. Sci. Instrum. 66, 4482 (1995).
20. H. Oyanagi, Applications of Synchrotron Radiation to Material Analysis, edited by H. Saisho and Y. Goshi (Elsevier, New York, 1996), p. 207.
21. D. W. Marquart, J. Soc. Ind. Appl. Math. 11, 431 (1963).
22. J. J. Rehr, S. I. Zabinsky, and R. C. Albers, Phys. Rev. Lett. 69, 3397 (1992).
23. D. E. Sayers and B. A. Bunker, X-ray Absorption, Principles, Applications, Techniques of EXAFS, SEXAFs, and XANES, edited by D. C. Koningsberger and R. Prins (Wiley, New York, 1988), p. 211.
24. C. Y. Fong, W. Weber, and J. C. Phillips, Phys. Rev. B 14, 14 (1976).
25. J. C. Phillips, Bonds and Bands in Semiconductors (Academic, New York and London, 1973), pp. 20-23.
26. J. A. Van Vechten and J. C. Phillips, Phys. Rev. B 2, 2160 (1970).
27. H. Oyanagi, T. Sakamoto, K. Sakamoto, T. Matsushita, T. Yao, and T. Ishigura, J. Phys. Soc. Jpn. 57, 2086 (1988).
28. M. Ikeda, K. Terakura, and T. Oguchi, Phys. Rev. B 45, 1496 (1992); ibid. 48, 1571 (1993).
29. M. Ikeda, K. Terakura, and T. Oguchi, Phys. Rev. B 45, 1496 (1992); ibid. 48, 1571 (1993).
30. A. Erbil, W. Weber, G. S. Gargill III, and R. F. Boehme, Phys. Rev. B 34, 1392 (1986).
31. M. Scheffler, Physica B & C 146, 176 (1987).
32. P. Krüger and J. Pollmann, Phys. Rev. B 47, 1898 (1993).
33. R. I. G. Uhrberg, R. D. Bringans, R. Z. Bachrach, and J. E. Northrup, J. Vac. Sci. Technol. A 4, 1259 (1986).