Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

Applied Physics Letters

Volumn 77, Issue 10, 2000, Pages 1452-1454

  Cimalla, V ^a   Zekentes, K ^a  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000680935     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1290720     Document Type: Article

References (14)

1. J. Tersoff, Phys. Rev. B 43, 9377 (1991); P. Ashu und C. C. Matthai. Appl. Surf. Sci. 48/49, 39 (1991).
2. J. Tersoff, Phys. Rev. B 43, 9377 (1991); P. Ashu und C. C. Matthai. Appl. Surf. Sci. 48/49, 39 (1991).
3. P. W. Deelman, T. Thundat, and L. J. Schowalter, Appl. Surf. Sci. 104/ 105, 510 (1996).
4. X. Wang, Z. Jiang, H. Zhu, F. Lu, D. Huang, X. Liu, C. Hu, Y. Chen, Z. Zhu, and T. Yao, Appl. Phys. Lett. 71, 3543 (1997).
5. Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).
6. M. Hammar, F. K. LeGoues, J. Tersoff, M. C. Reuter, and R. M. Tromp, Surf. Sci. 349, 129 (1996).
7. G. Medeiros-Ribeiro, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Mater. Sci. Eng., B 67, 31 (1999).
8. D. J. Eaglesham and R. Hull, Mater. Sci. Eng., B 30, 197 (1995).
9. V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, J. Pezoldt, S. Sioboshanin, and J. A. Schaefer, Appl. Phys. Lett. 73, 3542 (1998).
10. G. E. Tsyrlin, N. P. Korneeva, V. N. Demidov, N. K. Polyakov, V. N. Petrov, and N. N. Ledentsov, Semiconductors 31, 1057 (1997).
11. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda, J. Cryst. Growth 99, 254 (1990).
12. C. E. Aumann, Y. M. Mo, and M. G. Lagally, Appl. Phys. Lett. 59, 1061 (1991).
13. M. Kummer, B. Vögeli, T. Meyer, and H. von Känel, Phys. Rev. Lett. 84, 107 (2000).
14. A. A. Williams, J. M. C. Thornton, J. E. Macdonald, R. G. van Silfhout, J. F. van der Veen, M. S. Finney, A. D. Johnson, and C. Norris, Phys. Rev. B 43, 5001 (1991).