Admittance spectroscopy of Ge quantum dots in Si

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 227-229

  Asperger, T ^a   Miesner, C ^a   Brunner, K ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GROUND STATE; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES;

ADMITTANCE SPECTROSCOPY; COULOMB CHARGING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034505998     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01512-1     Document Type: Article

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