Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.1

Applied Physics Letters

Volumn 85, Issue 4, 2004, Pages 552-554

  Uppal, Suresh ^a   Willoughby, Arthur F W ^a   Bonar, Janet M ^b   Zhang, Jing ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b Innos Ltd   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

ARSENIC DIFFUSION; DEFECT INJECTION; DOPANT DIFFUSION; QUADRUPOLE MASS SPECTROMETERS;

SILICON;

EID: 4043118205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775883     Document Type: Article

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