On the modeling of transient diffusion and activation of boron during post-implantation annealing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 967-970

  Pichler, P ^a   Ortiz, C J ^a   Colombeau, B ^b   Cowern, N E B ^b   Lampin, E ^c   Claverie, A ^d   Cristiano, F ^d   Lerch, W ^e   Paul, S ^e  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c Institut Superieur de l'Electronique et du Numerique   (France)

^d LAAS CNRS   (France)

^e MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; AMORPHOUS SILICON; ANNEALING; CONCENTRATION (PROCESS); DIFFUSION; GENETIC ALGORITHMS; MATHEMATICAL MODELS; NUCLEATION; POINT DEFECTS; CHEMICAL ACTIVATION;

BORON-INTERSTITIAL CLUSTERS (BIC); BORON-INTERSTITIALS; MACROSCOPIC BORON DIFFUSION; PREAMORPHIZED SILICON;

BORON;

BORON-INTERSTITIAL CLUSTERS; COMBINED MODELING; CRYSTALLINE SILICONS; JUNCTION FORMATION; MODELING PARAMETERS; POSTIMPLANTATION ANNEALING; QUANTITATIVE DESCRIPTION; SELF INTERSTITIALS; TRANSIENT DIFFUSION; ULTRA SHALLOW JUNCTION;

EID: 21644438757     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

1. http://public.itrs.net.
2. http://www.iisb.fraunhofer.de/en/arb.geb/frendtech.html.
3. http://www.imec.be/artemis.
4. C. J. Ortiz, P. Pichler, T. Fühner, F. Cristiano, A. Claverie, B. Colombeau, and N. E. B. Cowern, "A physically-based model for the spatial and temporal evolution of self-interstitial agglomerates in ion implanted silicon," J. Appl. Phys., vol. 96, October 2004 (in print).
5. N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, "Energetics of self-interstitial clusters in Si," Phys. Rev. Lett., vol. 82, no. 22, pp. 4460-4463, 1999.
6. F. Cristiano, N. Cherkashin, X. Hebras, P. Calvo, Y. Lamrani, E. Scheid, B. de Mauduit, B. Colombeau, W. Lerch, S. Paul, and A. Claverie, "Ion beam induced defects in crystalline silicon," in Proceedings of the E-MRS 2003 Symposium E on Ion Beams for Nanoscale Surface (A. Claverie, ed.), vol. 216 of Nuclear Instruments and Methods in Physics Research B, pp. 46-56, 2004.
7. B. Colombeau, N. E. B. Cowern, F. Cristiano, P. Calvo, N. Cherkashin, Y. Lamrani, and A. Claverie, "Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon," Appl. Phys. Lett., vol. 83, no. 10, pp. 1953-1955, 2003.
8. E. Lampin, C. J. Ortiz, N. E. B. Cowern, B. Colombeau, and F. Cristiano, "Combined master equations and Fokker-Planck modeling of the kinetics of extended defects in Si." (unpublished).
9. H. H. Silvestri, I. D. Sharp, H. A. Bracht, S. P. Nicols, J. W. Beeman, J. Hansen, A. Nylandsted-Larsen, and E. E. Haller, "Dopant and self-diffusion in extrinsic n-type silicon isotopically controlled heterostructures," in Defect and Impurity Engineered Semiconductors and Devices III (S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, and H. Okushi, eds.), vol. 719 of Mat. Res. Soc. Symp. Proc., pp. F13.10.1-F13.10.6, 2002.
10. P. Pichler, Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon, section 5.3.3. Wien: Springer, 2004.
11. W. A. OrrArienzo, R. Glang, R. F. Lever, R. K. Lewis, and F. F. Morehead, "Boron diffusion in silicon at high concentrations," J. Appl. Phys., vol. 63, no. 1, pp. 116-120, 1988.
12. C. J. Ortiz, P. Pichler, V. Häublein, G. Mannino, S. Scalese, V. Privitera, S. Solmi, and W. Lerch, "Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments," in Silicon Front-End Junction Formationbibtexbibtex - Physics and Technology (P. Pichler, A. Claverie, R. Lindsay, M. Orlowski, and W. Windl, eds.), vol. 810 of Mat. Res. Soc. Symp. Proc., pp. C7.1.1-C7.1.6, 2004.
13. N. E. B. Cowern, M. J. J. Theunissen, F. Roozeboom, and J. G. M. van Berkum, "Boride-enhanced diffusion in silicon: Bulk and surface layers," Appl. Phys. Lett., vol. 75, no. 2, pp. 181-183, 1999.
14. B. Colombeau, A. J. Smith, N. E. B. Cowern, W. Lerch, S. Paul, B. J. Pawlak, F. Cristiano, X. Hebras, C. Ortiz, and P. Pichler, "Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control," in Technical Digest of the 8004 International Electron Devices Meeting (IEDM), (Piscataway), IEEE, 2004.
15. R. Duffy, V. C. Venezia, A. Heringa, T. W. T. Hüsken, M. J. P. Hopstaken, N. E. B. Cowern, P. B. Griffin, and C. C. Wang, "Boron uphill diffusion during ultrashallow junction formation," Appl. Phys. Lett., vol. 82, no. 21, pp. 3647-3649, 2003.
16. B. Colombeau et al. submitted to Appl. Phys. Lett., (unpublished).
17. B. J. Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, and F. Cristiano, "Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions," Appl. Phys. Lett., vol. 84, no. 12, pp. 2055-2057, 2004.