Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1168-1171

  Lampin, E ^a   Ortiz, C J ^b,c   Cowern, N E B ^d   Colombeau, B ^d   Cristiano, F ^e  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c UNIVERSITY OF ALICANTE   (Spain)

^d UNIVERSITY OF SURREY   (United Kingdom)

^e LAAS CNRS   (France)

Author keywords

Extended defects; Ion implanted Si; Modeling

Indexed keywords

COMPUTER SIMULATION; DEFECTS; DOPING (ADDITIVES); ION IMPLANTATION; MATHEMATICAL MODELS; REACTION KINETICS; TRANSMISSION ELECTRON MICROSCOPY;

EXTENDED DEFECTS; FOKKER-PLANCK EQUATION; INTERSTITAL DEFECTS; ION IMPLANTED SI;

SILICON;

EID: 21444454395     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.04.006     Document Type: Article

References (15)

1. D.J. Eaglesham, P.A. Stolk, H.J. Gossmann, and J.M. Poate Implantation and transient B diffusion in Si: the source of the interstitials Appl Phys Lett 65 1994 2305 2307
2. A. Claverie, L.F. Giles, M. Omri, B. de Mauduit, G. Ben Assayag, and D. Mathiot Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion Nucl Instr Meth Phys Res B 147 1999 1 12
3. N.E.B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, and J.G.M. van Berkum Energetics of self-interstitial clusters in Si Phys Rev Lett 82 1999 4460 4463
4. P.M. Fahey, P.B. Griffin, and J.D. Plummer Point defects and dopant diffusion in silicon Appl Phys Lett Rev Mod Phys 61 1989 289 384
5. E. Lampin, V. Senez, and A. Claverie Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon J Appl Phys 85 1999 8137 8144
6. A.H. Gencer, and S.T. Dunham A predictive model for transient enhanced diffusion based on evolution of {3 1 1} defects J Appl Phys 81 1997 631 636
7. G. Hobler, and C.S. Rafferty Modeling of {3 1 1} defects Mater Res Soc Symp Proc 566 1999 123 134
8. A. Claverie, B. Colombeau, B. de Mauduit, C. Bonafos, X. Hebras, and G. Ben Assayag Extended defects in shallow implants Appl Phys A 76 2003 1025 1033
9. M. Jaraiz Mater Res Soc Symp Proc 532 1998 43
10. M. Aboy, L. Pelaz, L.A. Marqués, L. Enriquez, and J. Barbolla Atomistic analysis of defect evolution and transient enhanced diffusion in silicon J Appl Phys 94 2003 1013 1018
11. C.J. Ortiz, and D. Mathiot A new kinetic model for the nucleation and growth of self-interstitial clusters in silicon Mater Res Soc Symp Proc 669 2001 J5.6.1
12. D. Stiebel, P. Pichler, and N.E.B. Cowern A reduced approach for modeling the influence of nanoclusters and {1 1 3} defects on transient enhanced diffusion Appl Phys Lett 79 2001 2654 2656
13. C.J. Ortiz, P. Pichler, T. Fühner, F. Cristiano, B. Colombeau, and N.E.B. Cowern A physically-based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon J Appl Phys 96 2004 4866 4877
14. P. Hanggi, H. Grabert, P. Talkner, and H. Thomas Bistable systems: Master equation versus Fokker-Planck modeling Phys Rev A 29 1984 371 378
15. Schilders WHA. In: Baccarani G, Rudan M, editors. Simulation of semiconductor devices and processes, vol. 3. Alma Mater Studiorum Sæcularia Nona; 1988. p. 519.