Influence of Mn-doping on densities of screw- and edge-type threading dislocations in Ga1-xMnxN grown by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2444-2449

  Chen, Z T ^a   Yang, X L ^a   Yang, Z J ^a   Zhao, H B ^a   Wang, C D ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A1. High resolution X ray diffraction; A1. Metalorganic chemical vapor deposition; A1. Threading dislocations; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DOPING (ADDITIVES); MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; X RAY DIFFRACTION;

HIGH RESOLUTION X RAY DIFFRACTION; THREADING DISLOCATIONS;

GALLIUM COMPOUNDS;

EID: 42249109820     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.056     Document Type: Article

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