Epitaxial SiC growth morphology and extended defects investigated by electron backscatter diffraction and electron channeling contrast imaging

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 691-698

  Picard, Yoosuf N ^a   Twigg, Mark E ^a   Caldwell, Joshua D ^a   Eddy Jr , Charles R ^a   Neudeck, Philip G ^b   Trunek, Andrew J ^c   Powell, J Anthony ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c OHIO AEROSPACE INSTITUTE   (United States)

^d Sest Inc   (United States)

Author keywords

4H SiC; Atomic steps; Backscatter diffraction; Dislocations; Electron channeling; Extended defects; Polytype

Indexed keywords

ELECTRON BACKSCATTER DIFFRACTION; ELECTRON CHANNELING CONTRAST IMAGING; EXTENDED DEFECTS; KIKUCHI MAPS; MESA SURFACES; POLYTYPE;

DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GROWTH RATE; IMAGING TECHNIQUES;

SILICON CARBIDE;

EID: 42249096752     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0308-0     Document Type: Conference Paper

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