Step structures produced by hydrogen etching of initially step-free (0001) 4H-SiC mesas

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 753-756

  Powell, J Anthony ^a   Neudeck, Philip G ^a   Trunek, Andrew J ^a   Abel, Phillip B ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

4H SiC; AFM; Hydrogen etching; Step free surface; Stepflow etching

Indexed keywords

ELECTROCHEMICAL ETCHING; PERIODIC STRUCTURES; POLYSILICON;

REPULSIVE FORCES; STEP-FREE SURFACES; STEPFLOW ETCHING; TEMPERATURE HYDROGEN ETCHING;

SILICON CARBIDE;

EID: 34250705140     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.753     Document Type: Conference Paper

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