Electron Back Scattering Diffraction (EBSD) as a tool for the investigation of 3C-SiC nucleation and growth on 6H or 4H

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 387-390

  Chaussende, D ^a,b   Chaudouet, P ^a   Auvray, L ^a,b   Pons, M ^c   Madar, R ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b SAVOIE TECHNOLAC   (France)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

3C SiC; EBSD; Nucleation

Indexed keywords

ELECTROMAGNETIC WAVE BACKSCATTERING; GROWTH KINETICS; HYDROGEN; MONITORING; NUCLEATION; OPTICAL MICROSCOPY;

3C-SIC; DOUBLE POSITION BOUNDARY (DPB); ELECTRON BACK SCATTERING DIFFRACTION (EBSD); LELY METHOD;

SILICON CARBIDE;

EID: 8744240419     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.387     Document Type: Conference Paper

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