Absence of dislocation motion in 3C-SiC pn diodes under forward bias

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 223-226

  Speer, K M ^a   Spry, D J ^b   Trunek, A J ^b   Neudeck, P G ^b   Crimp, M A ^c   Hile, J T ^c   Burda, C ^d   Pirouz, P ^a  

^a Case Western Reserve University   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c Michigan State University   (United States)

^d CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

3C SiC; Electroluminescence; Electron channeling contrast imaging; Partial dislocations; Stacking faults

Indexed keywords

DIODES; ELECTROLUMINESCENCE; SCREW DISLOCATIONS; STACKING FAULTS;

3C-SIC; CURRENT INJECTIONS; DISLOCATION MOTION; ELECTRON CHANNELING CONTRASTS; IN-GROWN STACKING FAULTS; LINEAR FEATURE; OPTICAL EMISSION MICROSCOPE; PARTIAL DISLOCATIONS;

SILICON CARBIDE;

EID: 34547496524     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.223     Document Type: Conference Paper

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