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Volumn 92, Issue 14, 2008, Pages

Low-power dihexylquaterthiophene-based thin film transistors for analog applications

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; DIELECTRIC MATERIALS; ELECTRIC POWER UTILIZATION; MICROFABRICATION; OPTIMIZATION; THIOPHENE;

EID: 42149169123     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2904963     Document Type: Article
Times cited : (8)

References (29)
  • 1
    • 57549094328 scopus 로고    scopus 로고
    • Organic Electronics: Materials, Manufacturing and Applications, edited by H. Klauk (Wiley-VCH, Weinheim).
    • Organic Electronics: Materials, Manufacturing and Applications, edited by, H. Klauk, (Wiley-VCH, Weinheim, 2007).
    • (2007)
  • 17
    • 0034228207 scopus 로고    scopus 로고
    • Based on nitrogen depth profiling experiments [, ()], we assume that the grafting chemistry of DTS on SiON is similar to that on Si O2.
    • Based on nitrogen depth profiling experiments [K. Kimura, K. Nakajima, Y. Okazaki, H. Kobayashi, S. Miwa, and K. Satori, Jpn. J. Appl. Phys., Part 1 39, 4663 (2000)], we assume that the grafting chemistry of DTS on SiON is similar to that on Si O2.
    • (2000) Jpn. J. Appl. Phys., Part 1 , vol.39 , pp. 4663
    • Kimura, K.1    Nakajima, K.2    Okazaki, Y.3    Kobayashi, H.4    Miwa, S.5    Satori, K.6
  • 22
    • 0000034240 scopus 로고    scopus 로고
    • For SiON devices, Rsd ranges from 6 to 40 M consistent with reported values for DH4T [, ()]. Systematic lower Rsd values for the SiON/DTS transistors by a factor of 2 or more were observed, likely originating from the presence of a DTS monolayer on Pd electrodes as confirmed by ellipsometry and contact angle measurements.
    • For SiON devices, Rsd ranges from 6 to 40 M consistent with reported values for DH4T [G. Horowitz, R. Hajlaoui, D. Fichou, and A. El Kassmi, J. Appl. Phys. 85, 3202 (1999)]. Systematic lower Rsd values for the SiON/DTS transistors by a factor of 2 or more were observed, likely originating from the presence of a DTS monolayer on Pd electrodes as confirmed by ellipsometry and contact angle measurements.
    • (1999) J. Appl. Phys. , vol.85 , pp. 3202
    • Horowitz, G.1    Hajlaoui, R.2    Fichou, D.3    El Kassmi, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.