Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1434-1438

  Farmakis, F V ^a   Kontogiannopoulos, G P ^a   Kouvatsos, D N ^a   Voutsas, A T ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIER STRESS CONDITIONS; POLYSILICON INTERFACE; SEQUENTIAL LATERAL SOLIDIFICATION (SLS);

HOT CARRIERS; POLYCRYSTALLINE MATERIALS; POLYSILICON; STRESS ANALYSIS; VOLTAGE CONTROL;

THIN FILM TRANSISTORS;

EID: 34548758523     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.030     Document Type: Article

References (13)

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