Nitrogen depth profiling in ultrathin silicon oxynitride films with high-resolution rutherford backscattering spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4663-4665

  Kimura, Kenji ^a   Nakajima, Kaoru ^a   Okazaki, Yasutaka ^a   Kobayashi, Hajime ^b   Miwa, Shiro ^b   Satori, Kotaro ^b  

^a KYOTO UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

AES; High resolution; Nitrogen depth profile; RBS; Silicon oxynitride; SIMS; Ultrathin film

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; ULTRATHIN FILMS;

DEPTH PROFILING; SILICON OXYNITRIDE;

SEMICONDUCTING FILMS;

EID: 0034228207     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4663     Document Type: Article

References (10)

1. T. Matsuoka, S. Taguchi, H. Ohtsuka, K. Taniguchi, C. Hamaguchi, S. Kakimoto and K. Uda: IEEE Trans. Electron Device 43 (1996) 1364.
2. M.-Y. Hao, W.-M. Chen, K. Lai, J. C. Lee, M. Gardner and J. Fulford: Appl. Phys. Lett. 66 (1995) 1126.
3. Y. Okada, P. J. Tobin, P. Rushbrook and W. L. DeHart: IEEE Trans. Electron Devices 41 (1994) 191.
4. M. R. Frost and C. W. Magee: Appl. Surf. Sci. 104/105 (1996) 379.
5. T. Aoyama, S. Ohkubo, H. Tashiro, Y. Tada, K. Suzuki and K. Horiuchi: Jpn. J. Appl. Phys. 37 (1998) 1244.
6. H. C.Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen and L. C. Feldman: Appl. Phys. Lett. 69 (1996) 2713.
7. I. J. R. Baumvol, J.-J. Ganem, L. G. Gosset, I. Trimaille and S. Rigo: Appl. Phys. Lett. 72 (1998) 2999.
8. K. Kimura, K. Ohshima and M. Mannami: Appl. Phys. Lett. 64 (1994) 2232.
9. K. Kimura, K. Nakajima and M. Mannami: Nucl. Instrum. & Methods Phys. Res. B 136/138 (1998) 1196.
10. J. C. Armstrong, J. V. Mullendore, W. R. Harris and J. B. Marion: Proc. Phys. Soc. 86 (1965) 1283.