3.5-inch QCIF AMOLED panels with ultra-low-temperature polycrystalline silicon thin film transistor on plastic substrate

ETRI Journal

Volumn 30, Issue 2, 2008, Pages 308-314

  Kim, Yong Hae ^a   Chung, Choong Heui ^a   Moon, Jaehyun ^a   Lee, Su Jae ^a   Kim, Gi Heon ^a   Song, Yoon Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

AMOLED; Flexible; Poly Si; Thin film transistor (TFT)

Indexed keywords

LOW TEMPERATURE EFFECTS; ORGANIC LIGHT EMITTING DIODES (OLED); POLYSILICON; THIN FILM TRANSISTORS;

PLASTIC SUBSTRATE; QCIF AMOLED PANELS;

DISPLAY DEVICES;

EID: 42149153818     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.08.0107.0210     Document Type: Article

References (15)

1. S. Wagner, H. Gleskova, I-C. Cheng, J.C. Sturm, and Z. Suo, "Mechanics of TFT Technology on Flexible Substrates," Flexible Flat Panel Displays, G.P. Crawford (ed.), West Sussex, England: John Wiley & Sons Ltd, 2005, pp. 263-282.
2. D.P. Gosain, T. Noguchi, and S. Usui, "High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C," Jpn. J. Appl. Phys. Part 2, vol. 39, 2000, pp.L179-L181.
3. T. Serikawa and F. Omata, "High-Mobility Poly-Si Thin Film Transistors Fabricated on Stainless-Steel Foils by Low-Temperature Processes Using Sputter-Depositions," Jpn. J. Appl. Phys. Part 2, vol. 39, 2000, pp. L393-L395.
4. P.G. Carey, P.M. Smith, S.D. Theiss, and P. Wichboldt, "Polysilicon Thin Film Transistors Fabricated on Low Temperature Plastic Substrates," J. Vac. Sci. Technol., vol. A17, 1999, pp. 1946-1949.
5. F. Lemmi, W. Chung, S. Lin, P.M. Smith, T. Sasagawa, B.C. Drews, A. Hua, J.R. Stern, and J.Y. Chen, "High-Perfbrmance TFTs Fabricated on Plastic Substrate," IEEE Electron Device Lett., vol. 25, 2004, pp. 486-488.
6. J.Y. Kwon, D.Y. Kim, H.S. Cho, K.B. Park, J.S. Jung, J.M. Kim, Y.S. Park, and T. Noguchi, "Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates," IEICE Trans. Electron., vol. E88-C, 2005, pp. 667-671.
7. Y.H. Kim, C.Y. Sohn, J.W. Lim, S.J. Yun, C.S. Hwang, C.H. Chung, Y.W. Ko, and J.H. Lee, "High-Perfbrmance Ultra-Low-Temperature Polycrystalline Silicon Using Sequential Lateral Solidification," IEEE Electron Device Lett., vol. 25, 2004, pp. 550-552.
8. Y.H. Kim, C.H. Chung, S.J. Yun, J. Moon, D.J. Park, D.W. Kim, J.W. Lim, Y.H. Song, and J.H. Lee, "Large Grain Polycrystalline Silicon Film by Sequential Lateral Solidification on a Plastic Substrate," Thin Solid Films, vol. 493, 2005, pp. 192-196.
9. Y.H. Kim, C.H. Chung, J. Moon, G.H. Kim, DJ. Park, D.W. Kim, J.W. Lim, S.J. Yun, Y.H. Song, and J.H. Lee, "Oxide-Silicon-Oxide Buffer Structure for Ultra-Low Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate," IEEE Electron Device Lett.,vol. 27, 2006, pp. 579-581.
10. J.W. Lim, S.J. Yun, Y.H. Kim, C.Y. Sohn, and J.H. Lee, 'Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs," Electrochem. Solid-State Lett., vol. 7,2004, pp. G185-G187.
11. J. W. Lim and S.J. Yun, "Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition," Electrochem. Solid-State Lett., vol. 7, 2004, pp. F45-F48.
12. Y.H. Kim, J. Moon, C.H. Chung, S.J. Yun, D.J. Park, J.W. Lim, Y.H. Song, and J.H. Lee, "Performance Improvement of Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate by Plasma Oxidation of Polycrystalline Si Surface," IEEE Electron Device Lett., vol. 27, 2006, pp. 896-898.
13. S.H.K. Park, J. Oh, C.S. Hwang, J.I. Lee, Y.S. Yang, and H.Y. Chu, "Ultrathin Film Encapsulation of an OLED by ALD," Electrochem. Solid-State Lett., vol. 8,2005, pp. H21-H23.
14. Y. Leterrier, L. Medico, F. Demarco, JA.E. Manson, U. Bete, M.F. Escola, M. Kharrazi Olsson, and F. Atamny, "Mechanical Integrity of Transparent Conductive Oxide Films for Flexible Polymer-Based Displays," Thin Solid Films, vol. 460, 2004, pp. 156-166.
15. R. Drosd and J. Washburn, "Some Observations on the Amorphous to Crystalline Transformation in Silicon," J. Appl. Phys., vol. 53, 1982, pp. 397-403.