Performance improvement of ultralow temperature polycrystalline silicon TFT on plastic substrate by plasma oxidation of polycrystalline Si surface

IEEE Electron Device Letters

Volumn 27, Issue 11, 2006, Pages 896-898

  Kim, Yong Hae ^a   Moon, Jaehyun ^a   Chung, Choong Heui ^a   Yun, Sun Jin ^a   Park, Dong Jin ^a   Lim, Jung Wook ^a   Song, Yoon Ho ^a   Lee, Jin Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Plasma oxidation; Polycrystalline Si; Thin film transistor (TFT)

Indexed keywords

DEPOSITION; LOW TEMPERATURE PROPERTIES; OXIDATION; PLASMA APPLICATIONS; POLYSILICON;

GATE DIELECTRIC FILM; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; PLASMA OXIDATION;

THIN FILM TRANSISTORS;

EID: 33750532530     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.883562     Document Type: Article

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