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Volumn 39, Issue 5 A, 2000, Pages
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High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low-temperature processes using sputter-depositions
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
CRYSTALLIZATION;
ELECTRIC CURRENTS;
GATES (TRANSISTOR);
GLOW DISCHARGES;
LASER APPLICATIONS;
METAL FOIL;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
SILICA;
SPUTTER DEPOSITION;
STAINLESS STEEL;
GLOW DISCHARGE SPUTTERING;
THIN FILM TRANSISTORS;
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EID: 0033686307
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.l393 Document Type: Article |
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Times cited : (20)
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References (18)
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