Analysis of the off current in nanocrystalline silicon bottom-gate thin-film transistors

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Esmaeili Rad, Mohammad R ^a   Sazonov, Andrei ^a   Nathan, Arokia ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; THIN FILM TRANSISTORS;

BAND BENDING; SIPASSIVATION NITRIDE INTERFACES;

NANOCRYSTALLINE SILICON;

EID: 42149111609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2902499     Document Type: Article

References (26)

1. A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, and D. Striakhilev, IEEE J. Solid-State Circuits 39, 1477 (2004).
2. R. A. Street, J.-P. Lu, and S. R. Ready, IEE Proc.: Circuits Devices Syst. 150, 250 (2003).
3. B. S. Bae, J.-W. Choi, S.-H. Kim, J.-H. Oh, and J. Jang, ETRI J. 28, 45 (2006).
4. B. C. Lim, Y. J. Choi, J. H. Choi, and J. Jang, IEEE Trans. Electron Devices 47, 367 (2000).
5. T. Tsujimura, Jpn. J. Appl. Phys., Part 1 43, 5122 (2004).
6. M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 1531 (2003).
7. L. Teng and W. A. Anderson, IEEE Electron Device Lett. 24, 399 (2003).
8. I.-C. Cheng, S. Allen, and S. Wagner, J. Non-Cryst. Solids 338-340, 720 (2004).
9. C.-H. Lee, A. Sazonov, and A. Nathan, Appl. Phys. Lett. 86, 222106 (2005).
10. C.-H. Lee, A. Sazonov, A. Nathan, and J. Robertson, Appl. Phys. Lett. 89, 252101 (2006).
11. P. Roca i Cabarrocas, R. Brenot, P. Bulkin, R. Vanderhaghen, B. Drevillon, and I. French, J. Appl. Phys. 86, 7079 (1999).
12. M. Hack, A. Chwang, Y.-J. Tung, R. Hewitt, J. Brown, J. P. Lu, C. Shih, J. Ho, R. A. Street, L. Moro, X. Chu, T. Krajewski, N. Rutherford, and R. Visser, " Giant-Area Electronics on Nonconventional Substrates," MRS Symposia Proceedings No. 870, edited by, M. S. Shur, P. Wilson, and, M. Stutzmann, (Materials Research Society, Pittsburgh, 2005), p. H3.1.1.
13. P. Servati and A. Nathan, IEEE Trans. Electron Devices 49, 812 (2002).
14. C.-H. Lee, D. Striakhilev, and A. Nathan, IEEE Trans. Electron Devices 54, 45 (2007).
15. C.-Y. Chang, Y.-S. Lee, T.-Y. Huang, P.-S. Shih, and C.-W. Lin, Mater. Chem. Phys. 62, 153 (2000).
16. A. Sazonov, D. Striakhilev, C.-H. Lee, and A. Nathan, Proc. IEEE 93, 1420 (2005).
17. M. J. Powell and J. Pritchard, J. Appl. Phys. 54, 3244 (1983).
18. Synopsys Inc., viewed 2007 August 6. Available at http://www.synopsys. com/products/mixedsignal/taurus/device_sim_ds.html.
19. T. Globus, H. C. Slade, M. Shur, and M. Hack, " Amorphous Silicon Technology," MRS Symposia Proceedings No. 336, edited by, E. Schiff, M. Hack, A. Madan, M. Powell, and, M. Matsuda, (Materials Research Society, Pittsburgh, 1994), p. 823.
20. R. E. I. Schropp, J. Snijder, and J. F. Verwey, J. Appl. Phys. 60, 643 (1986).
21. N. Lustig and J. Kanicki, J. Appl. Phys. 65, 3951 (1989).
22. D. Dosev, B. Iniguez, L. F. Marsal, J. Pallares, and T. Ytterdal, Solid-State Electron. 47, 1917 (2003).
23. M. J. Powell, IEEE Trans. Electron Devices 36, 2753 (1989).
24. D. W. Greve, Field Effect Devices and Applications: Devices for Portable, Low-Power, and Imaging Systems (Prentice-Hall, Englewood Cliffs, NJ, 1998).
25. J.-K. Yoon and J.-H. Kim, IEEE Electron Device Lett. 19, 335 (1998).
26. M. Ando, M. Wakagi, and T. Minemura, Jpn. J. Appl. Phys., Part 1 37, 3904 (1998).