Device simulations of nanocrystalline silicon thin-film transistors

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 1917-1920

  Dosev, D ^a   Iniguez B ^a   Marsal, L F ^a   Pallares, J ^a   Ytterdal, T ^b  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Density of states; Nanocrystalline silicon; TFT

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; GATES (TRANSISTOR); SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

NANOCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0042229243     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00167-9     Document Type: Article

References (12)

1. Powell M.J., van Berkel C., Franklin A.R., Deane S.C., Milne W.I. Defect pool in amorphous-silicon thin-film transistors. Phys. Rev. B. 45:1992;4160-4170.
2. Stoemenos J., Economou N.A., Haji L., Bonnel M., Duhamel N., Loisel B. Microstructure of poly-Si obtained by rapid thermal annealing of amorphous silicon films. Diffus. Defect Data, Part B. 37:1994;287-292.
3. Puigdollers J., Orpella A., Dosev D., Voz C., Peiro D., Pallares J.et al. Thin film transistors obtained by hot wire CVD. J. Non-Cryst. Solids. 266:2000;1304-1309.
4. Cabarrocas P.R., Brenot R., Bulkin P., Vanderhaghen R., Drevillon B.A., French I. Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique. J. Appl. Phys. 86:1999;7079-7082.
5. Wehrspohn R.B., Powell M.J., Deane S.C., French I.D., Roca i Cabarrocas P. Dangling-bond defect state creation in microcrystalline silicon thin-film transistors. Appl. Phys. Lett. 77:2000;750-752.
6. Dosev D.K., Puigdollers J., Orpella A., Voz C., Fonrodona M., Soler D.et al. Analysis of bias stress on thin-film transistors obtained by hot-wire chemical vapour deposition. Thin solid films. 383:2001;307-309.
7. Dosev D. Fabrication, characterization and modeling of microcrystalline nanocrystalline silicon thin film transistors obtained by hot-wire chemical vapour deposition. PhD thesis, Universitat Politècnica de Catalunya, Barcelona, 2003. http://www.tdx.cesca.es/TDX-0409103-100135/.
8. Schropp R.E.I., Feenstra K.F., Molenbroek E.C., Meiling H., Rath J.K. Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition. Philos. Mag. B. 76:1997;309-321.
9. Dosev D., Ytterdal T., Pallares J., Marsal L.F., Iñíguez B. DC SPICE model for nanocrystalline and microcrystalline silicon thin film transistors. IEEE Trans. Electron Dev. 49(11):2002;1979-1984.
10. SILVACO_Inc., Atlas User's Manual, vol. 1. Santa Clara, CA, 2000.
11. Puigdollers J., Dosev D., Orpella A., Voz C., Peiro D., Bertomeu J.et al. Microcrystalline silicon thin film transistors obtained by hot-wire CVD. Mater. Sci. Eng. B. 70:2000;526-529.
12. Shur M. Physics of semiconductor devices. 1990;Prentice Hall Inc. New Jersey.