Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices' electrical characteristics

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2321-2326

  Fregonese, Sébastien ^a,b   Zhuang, Yan ^c   Burghartz Joachim N , J N ^d,e  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITÉ DE BORDEAUX   (France)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d Institut fur Mikroelektronik Stuttgart   (Germany)

^e UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Dot; FET; Mobility; MOS; SiGe; SON; Strain

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS;

DRIVE CURRENTS; SHORT CHANNEL EFFECTS; TRANSIT FREQUENCIES;

CMOS INTEGRATED CIRCUITS;

EID: 41749102002     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902719     Document Type: Article

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