Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2327-2338

  Ayubi Moak, Jason S ^a   Ferry, David K ^a   Goodnick, Stephen M ^a   Akis, Richard ^a   Saraniti, Marco ^a  

^a Arizona State University   (United States)

Author keywords

Millimeter wave transistors; Monte Carlo methods; Pseudomorphic high electron mobility transistors (p HEMTs)

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MILLIMETER WAVE DEVICES; MONTE CARLO METHODS;

GATE LENGTHS; MILLIMETER-WAVE TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749088282     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902902     Document Type: Article

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