메뉴 건너뛰기




Volumn 43, Issue 4 B, 2004, Pages 1905-1909

30 nm triple-gate In0.7GaAs HEMTs fabricated by damage-free SiO2/SiNx sidewall process and BCB planarization

Author keywords

BCB; HEMT; InGaAs InAlAs; InP; Nanometer; Sidewall; Triple gate

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ETCHING; MICROWAVES; PERMITTIVITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICA; SILICON NITRIDE;

EID: 3142647345     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1905     Document Type: Conference Paper
Times cited : (7)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.