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Volumn 43, Issue 4 B, 2004, Pages 1905-1909
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30 nm triple-gate In0.7GaAs HEMTs fabricated by damage-free SiO2/SiNx sidewall process and BCB planarization
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Author keywords
BCB; HEMT; InGaAs InAlAs; InP; Nanometer; Sidewall; Triple gate
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
ELECTRIC RESISTANCE;
ELECTRON BEAM LITHOGRAPHY;
ETCHING;
MICROWAVES;
PERMITTIVITY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SILICA;
SILICON NITRIDE;
BCB;
INGAAS/INALAS;
INP;
NANOMETER;
SIDEWALL;
TRIPLE-GATE;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 3142647345
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.1905 Document Type: Conference Paper |
Times cited : (7)
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References (9)
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