Beyond G-Band: A 235 GHz InP MMIC amplifier

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 12, 2005, Pages 874-876

  Dawson, Douglas ^a,b   Samoska, Lorene ^a,b   Fung, A K ^a,b   Lee, Karen ^a,b   Lai, Richard ^a,c   Grundbacher, Ronald ^c   Liu, Po Hsin ^c   Raja, Rohit ^a,c  

^a IEEE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

G band; High electron mobility transistors (HEMTs); Indium phosphide; Millimeter wave field effect transistor (FET) amplifiers; Monolithic millimeter wave integrated circuits (mmics); Wr3 waveguide

Indexed keywords

G-BAND; MILLIMETER WAVE FET AMPLIFIERS; WR3 WAVEGUIDES;

HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC INTEGRATED CIRCUITS; SILICON WAFERS; VECTORS;

AMPLIFIERS (ELECTRONIC);

EID: 30344458172     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.859984     Document Type: Article

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